Compositions of matter and barrier layer compositions

ABSTRACT

In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between the conductive material and the second material. The barrier layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material. In another aspect, the invention encompasses a composition of matter comprising silicon chemically bonded to both nitrogen and an organic material. The nitrogen is not bonded to carbon. In yet another aspect, the invention encompasses a semiconductor processing method. A semiconductive substrate is provided and a layer is formed over the semiconductive substrate. The layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material.

TECHNICAL FIELD

[0001] The invention pertains to compositions of matter comprisingsilicon bonded to both nitrogen and inorganic material. The inventionfurther pertains to semiconductor devices incorporating theabove-described compositions of matter, and to methods of formingsemiconductor devices. In particular aspects, the invention pertains tosemiconductor devices incorporating copper-containing materials, and tomethods of forming such devices.

BACKGROUND OF THE INVENTION

[0002] It would be desirable to employ copper-containing materials insemiconductor devices. Copper has conductive properties that aresuperior to those of many of the conductive materials presently utilizedin semiconductor devices. Unfortunately, copper has a drawbackassociated with it that it cannot generally be placed againstoxide-comprising insulative materials (such as, for example, silicondioxide). If copper-containing materials are placed adjacentoxide-comprising insulative materials, oxygen can diffuse into thecopper-containing material and react to reduce conductivity of thematerial. Also, copper can diffuse into the oxide-containing material toreduce the insulative properties of the oxide-containing material.Additionally, copper can diffuse through oxide insulative material todevice regions and cause degradation of device (e.g., transistor)performance. The problems associated with copper are occasionallyaddressed by providing nitride-containing barrier layers adjacent thecopper-containing materials, but such can result in problems associatedwith parasitic capacitance, as illustrated in FIG. 1. Specifically, FIG.1 illustrates a fragment of a prior art integrated circuit, andillustrates regions where parasitic capacitance can occur.

[0003] The structure of FIG. 1 comprises a substrate 10, and transistorgates 12 and 14 overlying substrate 10. Substrate 10 can comprise, forexample, monocrystalline silicon lightly doped with a p-type backgroundconductivity-enhancing dopant. To aid in interpretation of the claimsthat follow, the term “semiconductive substrate” is defined to mean anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials thereon), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductive substratesdescribed above.

[0004] Transistor gates 12 and 14 can comprise conventionalconstructions such as overlying layers of gate oxide, polysilicon andsilicide. Insulative spacers 16 are formed adjacent transistor gates 12and 14, and conductively doped diffusion regions 18, 20 and 22 areformed within substrate 10 and proximate gates 12 and 14. Also,isolation regions 24 (shown as shallow trench isolation regions) areformed within substrate 10 and electrically isolate diffusion regions 18and 22 from other circuitry (not shown) provided within and oversubstrate 10.

[0005] An insulative material 26 extends over substrate 10, and overtransistor gates 12 and 14. A conductive plug 28 extends throughinsulative material 26 to contact conductive diffusion region 20.Conductive plug 28 can comprise, for example, conductively dopedpolysilicon. Insulative material 26 can comprise, for example, silicondioxide or borophosphosilicate glass (BPSG). Insulative material 26 andplug 28 together comprise a planarized upper surface 29. Planarizedsurface 29 can be formed by, for example, chemical-mechanical polishing.

[0006] A second insulative material 30 is formed over insulativematerial 26 and on planarized upper surface 29. Second insulativematerial 30 can comprise, for example, borophosphosilicate glass orsilicon dioxide. A conductive material 32 is formed within an opening ininsulative material 30 and over conductive plug 28. Conductive material32 comprises copper. The copper can be, for example, in the form ofelemental copper, or in the form of an alloy. Conductive material 32 isseparated from conductive plug 28 by an intervening barrier layer 34.Barrier layer 34 typically comprises a conductive material, such astitanium nitride (TiN) or tantalum nitride (TaN), and is provided toprevent out-diffusion of copper from conductive material 32 into eitherinsulative material 26 or the polysilicon of conductive plug 28. Barrierlayer 34 can also prevent diffusion of silicon or oxygen from layers 26,28 and 30 into the copper of conductive material 32. It is desired toprevent diffusion of oxygen to the copper of material 32, as such oxygencould otherwise reduce conductance of material 32. Also, it is desiredto prevent copper diffusion from material 32 into insulative layer 26,as such copper could reduce the insulative properties of the material oflayer 26. Additionally, diffusion through layer 26 and into one or moreof regions 18, 20 and 22 can reduce the performance of transistordevices.

[0007] A second conductive material 36 is provided over insulativematerial 26 and spaced from first conductive material 32. Secondconductive material 36 can comprise, for example, conductively dopedpolysilicon or a conductive metal, or a combination of two or moreconductive materials (such as copper and TiN). Second conductivematerial 36 is spaced from first conductive material 32 by anintervening region of insulative material 30 and barrier layer 34.

[0008] Insulative material 30, barrier layer 34, first conductivematerial 32 and second conductive material 36 share a common planarizedupper surface 37. Planarized upper surface 37 can be formed by, forexample, chemical-mechanical polishing.

[0009] An insulative barrier layer 38 is provided over planarized uppersurface 37. Insulative barrier layer 38 can comprise, for example,silicon nitride.

[0010] An insulative layer 40 is provided over insulative barrier layer38. Insulative layer 40 can comprise, for example, silicon dioxide orBPSG. Insulative barrier layer 38 inhibits diffusion of copper fromfirst conductive material 32 into insulative layer 40, and inhibitsdiffusion of oxygen from insulative layer 40 into first conductivematerial 32.

[0011] Another insulative layer 42 is provided over insulative layer 40,and a third conductive material 44 is provided within insulativematerial 42 and over first conductive material 32. Insulative material42 can comprise, for example, BPSG or silicon dioxide, and thirdconductive material 44 can comprise, for example, conductively dopedpolysilicon or a metal, or a combination of two or more conductivematerials (such as copper and TiN).

[0012] Conductive materials 32, 36 and 44 can be conductiveinterconnects between electrical devices, or portions of electricaldevices. The function of materials 32, 36 and 44 within a semiconductorcircuit is not germane to this discussion. Instead, it is theorientation of conductive materials 32, 36 and 44 relative to oneanother that is of interest to the present discussion. Specifically,each of materials 32, 36 and 44 is separated from the other materials byintervening insulative (or dielectric) materials. Accordingly, parasiticcapacitance can occur between the conductive materials 32, 36 and 44. Amethod of reducing the parasitic capacitance is to utilize insulativematerials that have relatively low dielectric constants (“k”). Forinstance, as silicon dioxide has a lower dielectric constant thatsilicon nitride, it is generally preferable to utilize silicon dioxidebetween adjacent conductive components, rather than silicon nitride.However, as discussed previously, copper-containing materials arepreferably not provided against silicon dioxide due to diffusionproblems that can occur. Accordingly, when copper is utilized as aconductive material in a structure, it must generally be spaced fromsilicon dioxide-comprising insulative materials to prevent diffusion ofoxygen into the copper structure, as well as to prevent diffusion ofcopper into the oxygen-comprising insulative material. Accordingly, thecopper materials are generally surrounded by nitride-comprisingmaterials (such as the shown barrier layers 34 and 38) to preventdiffusion from the copper materials, or into the copper materials.Unfortunately, this creates the disadvantage of having relatively highdielectric constant nitride materials (for example, the material oflayer 38) separating conductive materials. Accordingly, the requirementof nitride-comprising barrier layers can take away some of thefundamental advantage of utilizing copper-comprising materials inintegrated circuit constructions.

SUMMARY OF THE INVENTION

[0013] In one aspect, the invention encompasses a semiconductorprocessing method wherein a conductive copper-containing material isformed over a semiconductive substrate and a second material is formedproximate the conductive material. A barrier layer is formed between theconductive material and the second material. The barrier layer comprisesa compound having silicon chemically bonded to both nitrogen and anorganic material.

[0014] In another aspect, the invention encompasses a composition ofmatter comprising silicon chemically bonded to both nitrogen and anorganic material.

[0015] In yet another aspect, the invention encompasses a semiconductorprocessing method. A semiconductive substrate is provided and a layer isformed over the semiconductive substrate. The layer comprises a compoundhaving silicon chemically bonded to both nitrogen and an organicmaterial.

BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0017]FIG. 1 is a diagrammatic, cross-sectional, fragmentary view of aprior art integrated circuit construction.

[0018]FIG. 2 is a diagrammatic, cross-sectional, fragmentary view of anintegrated circuit construction encompassed by the present invention.

[0019]FIG. 3 is a diagrammatic, cross-sectional, fragmentary view ofanother embodiment integrated circuit construction encompassed by thepresent invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] This disclosure of the invention is submitted in furtherance ofthe constitutional purposes of the U.S. Patent Laws “to promote theprogress of science and useful arts” (Article 1, Section 8).

[0021] In accordance with one aspect of the present invention, a novelcomposition of matter has been developed which comprises siliconchemically bonded to both nitrogen and an organic material, and whereinthe nitrogen is not bonded to carbon. More specifically, the silicon ischemically bonded to both nitrogen and carbon. The carbon can be, forexample, in the form of a hydrocarbon. In a preferred aspect, the carbonis comprised by a methyl group and the composition of matter consistsessentially of (CH₃)_(x)Si₃N_((4-x)), wherein x is greater than 0 and nogreater than about 4.

[0022] A composition of the present invention can be formed by, forexample, reacting inorganic silane with one or more of ammonia (NH₃),hydrazine (N₂H₄), or a combination of nitrogen (N₂) and hydrogen (H₂).The reaction can occur with or without a plasma. However, if thereaction comprises an organic silane in combination with dinitrogen anddihydrogen, the reaction preferably occurs in the presence of plasma.

[0023] An exemplary reaction is to combine methylsilane (CH₃SiH₃) withammonia (NH₃) in the presence of a plasma to form (CH₃)_(x)Si₃N_(4-x).The exemplary reaction can occur, for example, under the followingconditions. A substrate is placed within a reaction chamber of areactor, and a surface of the substrate is maintained at a temperatureof from about 0° C. to about 600° C. Ammonia and methylsilane are flowedinto the reaction chamber, and a pressure within the chamber ismaintained at from about 300 mTorr to about 30 Torr, with a plasm atradio frequency (RF) power of from about 50 watts to about 500 watts. Aproduct comprising (CH₃)_(x)Si₃N_((4-x)) is then formed and deposited onthe substrate. The reactor can comprise, for example, a cold wall plasmareactor.

[0024] It is found that the product deposited from the describedreaction consists essentially of Si₃N_(y) and (CH₃)_(x)Si₃N_((4-x)),(wherein y is generally about 4/3, and x is also generally about 4/3).The (CH₃)_(x)Si₃N_((4-x)) is present in the product to a concentrationof from greater than 0% to about 50% (mole percent), and is preferablyfrom about 10% to about 20%. The amount of (CH₃)_(x)Si₃N_((4-x)) presentin the product can be adjusted by providing a feed gas of SiH₄ in thereactor in addition to the CH₃SiH₃, and by varying a ratio of the SiH₄to the CH₃SiH₃, and/or by adjusting RF power.

[0025] The compositions of matter encompassed by the present inventionare found to be insulative, and to have lower dielectric constants thansilicon nitride. Accordingly, compositions of the present invention canbe substituted for silicon nitride in barrier layers to reduce parasiticcapacitance between adjacent conductive components. FIG. 2 illustrates afragment of an integrated circuit incorporating a composition of thepresent invention. In referring to FIG. 2, similar numbering to thatutilized above in describing the prior art structure of FIG. 1 will beused, with differences indicated by different numerals.

[0026] The structure of FIG. 2 differs from the prior art structure ofFIG. 1 in that FIG. 2 illustrates a barrier layer 100 in place of thesilicon nitride barrier layer 38 of FIG. 1. Layer 100 can comprise, forexample, an above-described novel composition of the present invention,such as, for example, (CH₃)_(x)Si₃N_((4-x)). Alternatively, layer 100can comprise a composition which includes carbon, silicon and nitrogen,and wherein the nitrogen is bonded to carbon. Layer 100 is proximateconductive material 32 (actually against conductive material 32) andseparates second conductive material 44 from first conductive material32. In the construction shown in FIG. 2, barrier layer 100 separatesconductive material 32 from an insulative material 40 to impedemigration of oxide from insulative material 40 into copper of apreferred conductive material 32, as well as to impede migration ofcopper from preferred material 32 into insulative material 40.

[0027]FIG. 3 illustrates an alternate embodiment semiconductorconstruction of the present invention (with numbering identical to thatutilized in FIG. 2), wherein insulative material 40 (FIG. 2) iseliminated. Barrier layer 100 is thus the only material between firstconductive material 32 and second conductive material 44, and is againstboth conductive material 32 and conductive material 44.

[0028] In exemplary embodiments of the present invention, barrier layer100 comprises (CH₃)_(x)Si₃N_((4-x)) (wherein “x” is from about 1 toabout 4, and preferably wherein “x” is about 0.7). Such barrier layer100 can be formed by the methods discussed above, and can, for example,consist essentially of Si₃N_(y) and (CH₃)_(x)Si₃N_((4-x)). Also, anamount of (CH₃)_(x)Si₃N_((4-x)) within barrier layer 100 can be adjustedby the above-discussed methods of adjusting a ratio of SiH₄ and CH₃SiH₃during formation of the layer. An exemplary concentration of(CH₃)_(x)Si₃N_((4-x)) within barrier layer 100 is from greater than 0%to about 20% (mole percent).

[0029] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A semiconductor processing method, comprising: forming a conductivecopper-containing material over a semiconductive substrate; forming asecond material proximate the conductive material; and forming a barrierlayer between the conductive material and the second material, thebarrier layer comprising a compound having silicon chemically bonded toboth nitrogen and an organic material.
 2. The method of claim 1 whereinconductive material consists essentially of copper.
 3. The method ofclaim 1 wherein the barrier layer is against the conductive material. 4.The method of claim 1 wherein the barrier layer is against both theconductive material and the second material.
 5. The method of claim 1wherein the second material is an insulative material.
 6. The method ofclaim 1 wherein the second material comprises silicon dioxide.
 7. Themethod of claim 1 wherein the organic material comprises a methyl group.8. The method of claim 1 wherein the organic material is a methyl group.9. The method of claim 1 wherein the nitrogen that is bonded to thesilicon is not bonded to carbon.
 10. The method of claim 1 wherein thecompound consists essentially of (CH₃)_(x)Si₃N_((4-x)), with x beinggreater than 0 and no greater than
 4. 11. The method of claim 1 whereinthe compound consists essentially of (CH₃)_(x)Si₃N_((4-x)) and thebarrier layer consists essentially of Si₃N_(y) and the(CH₃)_(x)Si₃N_((4-x)), wherein x is greater than 0 and no greater than4, and wherein y is greater than 0 and no greater than about
 4. 12. Themethod of claim 1 wherein the compound consists essentially of(CH₃)_(x)Si₃N_((4-x)) and the barrier layer consists essentially ofSi₃N_(y) and the (CH₃)_(x)Si₃N_((4-x)), wherein x is greater than 0 andno greater than 4, wherein y is greater than 0 and no greater than about4, and wherein the (CH₃)_(x)Si₃N_((4-x)) is present in the barrier layerto a concentration of from greater than 0% to about 20% (mole percent).13. The method of claim 1 wherein the compound consists essentially of(CH₃)_(x)Si₃N_((4-x)), and wherein the forming occurs in a reactionchamber and comprises combining CH₃SiH₃ and NH₃ in the chamber todeposit the (CH₃)_(x)Si₃N_((4-x)) over the substrate, wherein x isgreater than 0 and no greater than about
 4. 14. The method of claim 1wherein the compound consists essentially of (CH₃)_(x)Si₃N_((4-x)), andwherein the forming occurs in a reaction chamber and comprises combiningCH₃SiH₃ and NH₃ in the chamber with a plasma to deposit the(CH₃)_(x)Si₃N_((4-x)) over the substrate, wherein x is greater than 0and no greater than about
 4. 15. The method of claim 1 wherein thecompound consists essentially of (CH₃)_(x)Si₃N_((4-x)) and the barrierlayer consists essentially of Si₃N_(y) and the (CH₃)_(x)Si₃N_((4-x)),and wherein the forming occurs in a reaction chamber and comprisescombining CH₃SiH₃, SiH₄ and NH₃ in the chamber with a plasma to depositthe (CH₃)_(x)Si₃N_((4-x)) over the substrate, wherein x is greater than0 and no greater than about 4, and wherein y is greater than 0 and nogreater than about
 4. 16. A semiconductor processing method, comprising:providing a semiconductive substrate; forming a first material over thesemiconductive substrate; forming a barrier layer proximate the firstmaterial, the barrier layer comprising a compound having siliconchemically bonded to both nitrogen and an organic material; and forminga second material separated from the first material by the barrierlayer.
 17. The method of claim 16 wherein the barrier layer is formedagainst the first material.
 18. The method of claim 16 wherein thebarrier layer is formed against the first material, and wherein thesecond material is formed against the barrier layer.
 19. The method ofclaim 16 wherein at least one of the first and second materials isconductive.
 20. The method of claim 16 wherein at least one of the firstand second materials is insulative.
 21. The method of claim 16 whereinthe nitrogen that is bonded to the silicon is not bonded to carbon. 22.The method of claim 16 wherein the compound consists essentially of(CH₃)₃Si₃N_((4-x)), with x being greater than 0 and no greater thanabout
 4. 23. The method of claim 16 wherein the compound consistsessentially of (CH₃)_(x)Si₃N_((4-x)) and the barrier layer consistsessentially of Si₃N_(y) and the (CH₃)_(x)Si₃N_((4-x)), wherein x isgreater than 0 and no greater than about 4, and wherein y is greaterthan 0 and no greater than about
 4. 24. A semiconductor processingmethod, comprising: providing a semiconductive substrate; and forming alayer over the semiconductive substrate, the layer comprising a compoundhaving silicon chemically bonded to both nitrogen and an organicmaterial.
 25. The method of claim 24 wherein the organic materialcomprises a methyl group.
 26. The method of claim 24 wherein the organicmaterial is a methyl group.
 27. The method of claim 24 wherein thenitrogen that is bonded to the silicon is not bonded to carbon.
 28. Themethod of claim 24 wherein the compound consists essentially of(CH₃)_(x)Si₃N_((4-x)), with x being greater than 0 and no greater thanabout
 4. 29. The method of claim 24 wherein the compound consistsessentially of (CH₃)_(x)Si₃N_((4-x)) and the layer consists essentiallyof Si₃N_(y) and the (CH₃)_(x)Si₃N_((4-x)), wherein x is greater than 0and no greater than about 4, and wherein y is greater than 0 and nogreater than about
 4. 30. The method of claim 24 wherein the compoundconsists essentially of (CH₃)_(x)Si₃N_((4-x)) and the layer consistsessentially of Si₃N_(y) and the (CH₃)_(x)Si₃N_((4-x)), and wherein the(CH₃)_(x)Si₃N_((4-x)) is present in the layer to a concentration of fromgreater than 0% to about 20% (mole percent), wherein x is greater than 0and no greater than about 4, and wherein y is greater than 0 and nogreater than about
 4. 31. The method of claim 24 wherein the compoundconsists essentially of (CH₃)_(x)Si₃N_((4-x)), wherein x is greater than0 and no greater than about 4, and wherein the forming occurs in areaction chamber and comprises combining CH₃SiH₃ and NH₃ in the chamberto deposit the (CH₃)_(x)Si₃N_((4-x)) over the substrate.
 32. The methodof claim 24 wherein the compound consists essentially of(CH₃)_(x)Si₃N_((4-x)), wherein x is greater than 0 and no greater thanabout 4, and wherein the forming occurs in a reaction chamber andcomprises combining CH₃SiH₃ and NH₃ in the chamber with a plasma todeposit the (CH₃)_(x)Si₃N_((4-x)) over the substrate.
 33. The method ofclaim 24 wherein the compound consists essentially of(CH₃)_(x)Si₃N_((4-x)) and the layer consists essentially of Si₃N_(y) andthe (CH₃)_(x)Si₃N_((4-x)) wherein x is greater than 0 and no greaterthan about 4, and wherein the forming occurs in a reaction chamber andcomprises combining CH₃SiH₃, SiH₄ and NH₃ in the chamber with a plasmato deposit the (CH₃)_(x)Si₃N_((4-x)) over the substrate.
 34. Acomposition of matter comprising silicon chemically bonded to bothnitrogen and carbon, and wherein the nitrogen is not bonded to carbon.35. The composition of claim 34 wherein the carbon is part of ahydrocarbon.
 36. A composition of matter comprising silicon chemicallybonded to both nitrogen and an organic material, and wherein thenitrogen is not bonded to carbon.
 37. The composition of claim 36wherein the silicon is bonded to a carbon of the organic material. 38.The composition of claim 36 wherein the organic material comprises amethyl group.
 39. The composition of claim 36 wherein the organicmaterial is a methyl group.
 40. The composition of claim 36 wherein theorganic material is a hydrocarbon.
 41. The composition of claim 36wherein the silicon, nitrogen and organic material together comprise(CH₃)_(x)Si₃N_((4-x)), with x being greater than 0 and no greater thanabout
 4. 42. A semiconductor device, comprising: a semiconductivesubstrate; and a layer over the semiconductive substrate, the layercomprising a compound having silicon chemically bonded to both nitrogenand an organic material.
 43. The device of claim 42 wherein the nitrogenis not bonded to carbon.
 44. The device of claim 42 wherein the organicmaterial comprises a methyl group.
 45. The device of claim 42 whereinthe organic material is a methyl group.
 46. The device of claim 42wherein the organic material is a hydrocarbon.
 47. The device of claim42 wherein the compound consists essentially of (CH₃)_(x)Si₃N_((4-x)),with x being greater than 0 and no greater than about
 4. 48. The deviceof claim 42 wherein the compound consists essentially of(CH₃)_(x)Si₃N_((4-x)) and the layer consists essentially of Si₃N_(y) andthe (CH₃)_(x)Si₃N_((4-x)), wherein x is greater than 0 and no greaterthan about 4, and wherein y is greater than 0 and no greater than about4.
 49. The device of claim 42 wherein the compound consists essentiallyof (CH₃)_(x)Si₃N_((4-x)) and the layer consists essentially of Si₃N_(y)and the (CH₃)_(x)Si₃N_((4-x)), wherein the (CH₃)_(x)Si₃N_((4-x)) ispresent in the layer to a concentration of from greater than 0% to about50% (mole percent), wherein x is greater than 0 and no greater thanabout 4, and wherein y is no greater than about
 4. 50. A semiconductordevice, comprising: a semiconductive substrate; a first material overthe semiconductive substrate; a second material proximate the firstmaterial; and a barrier layer separating the second material from thefirst material, the barrier layer comprising a compound having siliconchemically bonded to both nitrogen and an organic material.
 51. Thedevice of claim 50 wherein at least one of the first and secondmaterials is conductive.
 52. The device of claim 50 wherein the nitrogenis not bonded to carbon.
 53. The device of claim 50 wherein at least oneof the first and second materials is insulative.
 54. The device of claim50 wherein the compound consists essentially of (CH₃)_(x)Si₃N_((4-x)),with x being greater than 0 and no greater than about
 4. 55. The deviceof claim 50 wherein the compound consists essentially of(CH₃)_(x)Si₃N_((4-x)) and the barrier layer consists essentially ofSi₃N_(y) and the (CH₃)_(x)Si₃N_((4-x)) wherein x is greater than 0 andno greater than about 4, and wherein y is no greater than about
 4. 56. Asemiconductor device, comprising: a semiconductive substrate; aconductive copper-containing material over the semiconductive substrate;a second material proximate the conductive material; and a barrier layerbetween the conductive material and the second material, the barrierlayer comprising a compound having silicon chemically bonded to bothnitrogen and an organic material.
 57. The device of claim 56 wherein thebarrier layer is against the conductive material.
 58. The device ofclaim 56 wherein the nitrogen is not bonded to carbon.
 59. The device ofclaim 56 wherein the barrier layer is against both the conductivematerial and the second material.
 60. The device of claim 56 wherein thesecond material is an insulative material.
 61. The device of claim 56wherein the second material comprises silicon dioxide.
 62. The device ofclaim 56 wherein the organic material comprises a methyl group.
 63. Thedevice of claim 56 wherein the organic material is a methyl group. 64.The device of claim 56 wherein the compound consists essentially of(CH₃)_(x)Si₃N_((4-x)) with x being greater than 0 and no greater thanabout
 4. 65. The device of claim 56 wherein the compound consistsessentially of (CH₃)_(x)Si₃N_((4-x)) and the barrier layer consistsessentially of Si₃N_(y) and the (CH₃)_(x)Si₃N_((4-x)), wherein x isgreater than 0 and no greater than about 4, and wherein y is no greaterthan about
 4. 66. The device of claim 56 wherein the compound consistsessentially of (CH₃)_(x)Si₃N_((4-x)) and the barrier layer consistsessentially of Si₃N_(y) and the (CH₃)_(x)Si₃N_((4-x)), wherein the(CH₃)_(x)Si₃N_((4-x)) is present in the layer to a concentration of fromgreater than 0% to about 50% (mole percent), wherein x is greater than 0and no greater than about 4, and wherein y is no greater than about 4.